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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220F package *Complement to type MJF15031 *High transition frequency *DC current gain specified to 4.0 amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS *Designed for general-purpose amplifier and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJF15030 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 8 16 2 2 W 36 150 -65~150 UNIT V V V A A A THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance ; junction to case Thermal resistance , junction to ambient MAX 3.5 62.5 UNIT /W /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IC=1A ;IB=0.1A IC=1A ; VCE=2V VCB=150V; IE=0 VCE=150V; IB=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=2A ; VCE=2V IC=3A ; VCE=2V IC=4A ; VCE=2V IC=0.5A;VCE=10V;f=10MHz 40 40 40 20 30 MIN 150 MJF15030 SYMBOL VCEO(SUS) VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT TYP. MAX UNIT V 0.5 1.0 10 10 10 V V A A A MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJF15030 Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJF15030 4 |
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